Group II-VI material semiconductor optical device with strained multiquantum barriers
US5362974A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 1993 |
| Grant date | Nov 8, 1994 |
| Priority date | — |
| Expiry date | Jun 9, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/824
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention provides a blue light semiconductor optical device capable of effectively oscillating in a temperature range above room temperature. A double hetero structure semiconductor optical device according to the invention is made of a compound semiconductor containing Zn and/or Cd as group II elements and S and/or Se and/or Te as group VI elements and comprises an active layer, a light confining layer and a cladding layer arranged on a semiconductor substrate as well as a multiquantum barrier structure having a strained superlattice layer in part of the cladding layer or the light confining layer for an effect of reflecting incident carriers as waves in phase conditions capable of allowing mutual enhancement of the incident and reflected waves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.