Single mirror light-emitting diodes with enhanced intensity
US5362977A · kind A · utility
47Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 1992 |
| Grant date | Nov 8, 1994 |
| Priority date | — |
| Expiry date | Dec 28, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/862
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
This invention embodies single mirror light-emitting diodes (LEDs) with enhanced intensity. The LEDs are Group III-V and/or II-IV compound semiconductor structures with a single metallic mirror. The enhanced intensity is obtained by placing an active region of the LED having from two to ten, preferably from four to eight, quantum wells at an anti-node of the optical node of the device created by a nearby metallic mirror. Such multiquantum well LED structures exhibit enhanced efficiencies approaching that of a perfect isotropic emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.