Solid-state image sensing apparatus
US5363000A · kind A · utility
8Cited by
25References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1993 |
| Grant date | Nov 8, 1994 |
| Priority date | — |
| Expiry date | Feb 3, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/082
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In an image sensing device, a photodiode is connected to a drain of a MOS transistor. The drain is connected to a gate of the MOS transistor via a resistor. The MOS transistor operates in a subthreshold region to output a signal being logarithmically proportional to the intensity of incident light to the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.