Method of deposing by molecular beam epitaxy

US5364492A · kind A · utility

Assignee

• Varian, Inc. · US

Inventors

• James N. Eckstein · Cupertino, US
• Ivan Bozovic · Palo Alto, US
• Martin E. Klausmeier-Brown · San Jose, US
• Gary F. Virshap · Cupertino, US

Key dates

• Filing date: Sep 17, 1992
• Grant date: Nov 15, 1994
• Expiry date: Sep 17, 2012

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B23/002
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A new method for accurately and sequentially growing monolayers and creating new superlattice structures employing a MBE thermal source control technique employing a quasi-double beam atomic absorption background correction measurements with the beam blocked and with the beam unblocked and by calculating the concentration based on the: ##EQU1## and applying corrections for non-linear absorption curves because of comparable spectral bandwidth of the molecular beam.