Process for non-selectively forming deposition film on a non-electron-donative surface
US5364664A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1992 |
| Grant date | Nov 15, 1994 |
| Priority date | — |
| Expiry date | Dec 22, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a deposition film comprising aluminum comprises the steps of: treating chemically a surface of a substrate having an electron-donative surface and a non-electron-donative surface so as to terminate the electron-donative surface with hydrogen atoms, and thereafter placing the substrate in a space for deposition film formation; introducing gas comprising alkylaluminum hydride and hydrogen gas into the space for deposition film formation; and forming an aluminum film selectively on the electron-donative surface by maintaining the substrate at a temperature in the range of from not lower than the decomposition temperature of the alkylaluminum hydride to not higher than 450.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.