Oxynitride fuse protective/passivation film for integrated circuit having resistors
US5365104A · kind A · utility
38Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 1993 |
| Grant date | Nov 15, 1994 |
| Priority date | — |
| Expiry date | Mar 25, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxynitride passivation layer and/or fuse protective layer for an SRAM cell having load resistors, where the composition of the oxynitride layer minimizes the effect of hydrogen diffusion on the resistance of underlying load resistors. The index of refraction of the oxynitride is between 1.60 and 1.85. This oxynitride does not substantially diffuse hydrogen into the load resistors even when heated to temperatures over 400.degree. C., and hence, avoids altering resistance during subsequent annealing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.