MIS semiconductor device with polysilicon gate electrode
US5365109A · kind A · utility
1Cited by
10References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 11, 1992 |
| Grant date | Nov 15, 1994 |
| Priority date | — |
| Expiry date | Aug 11, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6739
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MIS semiconductor device comprises, on a silicon wafer, a gate oxide layer, a polysilicon gate electrode comprising a gate layer of polysilicon of grain size of not less than 0.3 .mu.m doped with boron in a doping amount of not less than 3.times.10.sup.19 atoms/cm.sup.3, and a gate insulation layer, provided with metal electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.