Semiconductor memory device usable as static type memory and read-only memory and operating method therefor
US5365475A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1991 |
| Grant date | Nov 15, 1994 |
| Priority date | — |
| Expiry date | Aug 19, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/412
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Each of memory cells of a semiconductor memory device comprises a transistor connected between a node and a node, a transistor connected between the node and a node, a transistor connected between a node and a node, and a transistor connected between node and a node. Each of the nodes is connected to either of a first potential line and a second supply line in a program unit when it is manufactured, and each of the nodes is connected to either of the first and the second ground lines in a program unit when it is manufactured. A supply potential is supplied to the first supply line, and the supply potential or the ground potential is selectively supplied to the second supply line. The ground potential is supplied to the first ground line, and the ground potential or the supply potential is selectively supplied to the second ground line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.