Integrated circuit of semiconductor lasers
US5365533A · kind A · utility
8Cited by
5References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 9, 1992 |
| Grant date | Nov 15, 1994 |
| Priority date | — |
| Expiry date | Nov 9, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure relates to integrated circuits of lasers, wherein the linear arrays are supplied in series, with a return of current through the substrate. When the substrate is semi-insulating, only the first epitaxially grown layer is conductive. To reduce its electrical resistance, a surface film of the substrate is made conductive by diffusion of a dopant. Application to power semiconductor lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.