Semiconductor element manufacturing method
US5365875A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1992 |
| Grant date | Nov 22, 1994 |
| Priority date | — |
| Expiry date | Sep 18, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of this invention is to provide a semiconductor element manufacturing method in which, in forming a polycrystal semiconductor layer by applying ultraviolet rays to an amorphous semiconductor layer formed on a large substrate, an excimer laser employed in the conventional art is used in such a manner that the layer is made uniform in crystallinity, thereby to manufacture a polycrystal semiconductor layer high in quality. According to the present invention, in a semiconductor element manufacturing method comprising a step of applying an excimer laser beam providing a beam spot having a predetermined irradiation area to an amorphous semiconductor layer formed on an insulating substrate to crystallize the amorphous semiconductor layer to obtain a polycrystal semiconductor layer, the beam spot is moved over said amorphous semiconductor layer in a scanning mode while being shifted with a pitch of at most 1 mm, so that all the parts of the semiconductor layer are substantially equal to one another in the energy applied thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.