Method of forming grain boundary junctions in high temperature superconductor films
US5366953A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1993 |
| Grant date | Nov 22, 1994 |
| Priority date | — |
| Expiry date | Dec 22, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/702
Abstract
A novel method of producing weak-link grain boundary Josephson junctions in high temperature superconducting thin films is disclosed. These junctions are reliably and reproducibly formed on uniform planar substrates (10) by the action of a seed layer (40) placed intermediate the substrate (10) and the superconductor film (20). The superconductor film (22) grown atop the seed (42) is misoriented from the rest of the film (24) by an angle between 5.degree. and 90.degree.. The grain boundary (30) so formed acts as a high quality weak-link junction for superconductor devices. The performance of these junctions can be improved by the addition of buffer layers (50, 60) between the substrate (10) and the superconductor film (20).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.