Thin-film transistor having electrodes made of aluminum, and an active matrix panel using same
US5367179A · kind A · utility
46Cited by
16References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1992 |
| Grant date | Nov 22, 1994 |
| Priority date | — |
| Expiry date | Nov 12, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/443
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.