Photodiode array device and method for producing same
US5367188A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 17, 1992 |
| Grant date | Nov 22, 1994 |
| Priority date | — |
| Expiry date | Dec 17, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The improved photodiode array has a structure that has pn-junctions arranged in a row on a semiconductor substrate 1 having an oxide film 2. The photodiode array has such a surface pattern that n-type impurity diffused layers 3 and p-type impurity diffused layers 4 are arranged in a generally concentric manner or with layers of one diffusion type alternating with layers of the other diffusion type. The improved process of fabrication comprises joining the oxide film 2 on the semiconductor substrate 1 to an n-type semiconductor layer 3 and then diffusing a p-type impurity within the n-type semiconductor layer 3 to form pn-junctions, thereby yielding a photodiode array. Thereby, it is provided a photodiode array that has such a simple structure that not only is he yield of device fabrication improved but also the cost of the final product is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.