Semiconductor memory device
US5367487A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 4, 1993 |
| Grant date | Nov 22, 1994 |
| Priority date | — |
| Expiry date | Aug 4, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/147
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An external source voltage is received by a semiconductor memory chip. A first source voltage corresponding to the external source voltage and a second source voltage which is lower than the first source voltage are supplied to an internal circuit of the semiconductor memory chip. The memory chip includes a memory cell array section, having at least a sense amplifier, and a peripheral circuit. The first source voltage is supplied to the memory cell array section when data is transferred between the semiconductor memory chip and an external device, and the second source voltage is supplied thereto to read and write data within the semiconductor memory chip when data is maintained only. The first source voltage is supplied to the peripheral circuit, when the second source voltage is supplied to the memory cell array section to maintain data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.