Voltage pumping circuit for semiconductor memory devices
US5367489A · kind A · utility
64Cited by
2References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 9, 1992 |
| Grant date | Nov 22, 1994 |
| Priority date | — |
| Expiry date | Nov 9, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/073
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high density semiconductor device is provided with an improved voltage pumping (bootstrapping) circuit. The voltage pumping circuit generates at an initial power-up state a first output voltage which is substantially identical to the memory device source supply voltage. The pumping circuit then pumps the first output voltage up to a second output voltage which is higher than the first output voltage. The pumping operation is achieved prior to or upon the semiconductor memory device being enabled in response to a series of pulses output from an oscillator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.