Method of making transparent polysilicon gate for imaging arrays

US5369040A · kind A · utility

Assignee

• Westinghouse Electric Company LLC · US

Inventors

• James Halvis · Severna Park, US
• Nathan Bluzer · Rockville, US
• Robert R. Shiskowski · Sykesville, US
• Li-Shu Chen · Ellicott City, US

Key dates

• Filing date: Apr 12, 1993
• Grant date: Nov 29, 1994
• Expiry date: Apr 12, 2013

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0198

Abstract

An improved MOS photodetector having polysilicon gate material which is made more transparent to visible light by the addition of up to 50% carbon, and preferably about 10% carbon. The surfaces of the polysilicon-carbon gates are oxidized to form a silicon dioxide dielectric layer, thus eliminating the need to deposit a separate dielectric layer for isolation of adjacent gates in an overlapping gate array. The elimination of a separate dielectric layer permits all gates to be formed directly on the substrate dielectric layer, thus providing a uniform drive voltage requirement across the array.