Method for fabricating titanium silicide contacts
US5369055A · kind A · utility
22Cited by
3References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 4, 1993 |
| Grant date | Nov 29, 1994 |
| Priority date | — |
| Expiry date | Jun 4, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating titanium silicide contacts wherein prior to a Ti sputtering process, ions having a conductivity opposite to the conductivity of source and drain regions on each well are implanted in the source and drain regions by using the same mask as used in the Ti sputtering process, so as to form low concentration regions at contact surfaces and high concentration regions at regions beneath the contact surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.