Semiconductor laser
US5369658A · kind A · utility
13Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1993 |
| Grant date | Nov 29, 1994 |
| Priority date | — |
| Expiry date | Jun 25, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32308
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A self-aligned type, high-power semiconductor laser is provided which exhibits multi-longitudinal mode oscillation in the low-power operation (at a light power output of, for example, 3 mW) through it is of a refractive index guiding structure capable of single transverse mode oscillation in up to the high-power operation. Specifically, the semiconductor laser is of an AlGaAs system and has a waveguide mechanism resulting from complex refractive index, and wherein a current-blocking layer is 2000 to 6000 .ANG. thick.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.