Semiconductor slapper
US5370054A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1992 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Oct 1, 2012 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF42B3/13
- WIPO fieldOther special machines
- WIPO sectorMechanical engineering
Abstract
An RF-insensitive semiconductor slapper ignitor is created using a silicon ubstrate having a first metallized portion centrally located on its bottom face to form a Schottky barrier diode thereon, and a second substantially smaller metallized portion centrally located on its top face to form a consumable plug. A flyer disc is disposed atop the second metallized portion and is propelled when the consumable plug vaporizes in response to the high current density associated with ignition. In various embodiments the flyer disc is either an insulating material such as plastic, or polyimide, or formed integral to a top contact metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.