Monolithic microwave power sensor
US5370458A · kind A · utility
16Cited by
9References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 9, 1990 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Oct 9, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R21/04
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A monolithic integrated circuit power sensor provides a monolithic integrated circuit substrate a conversion element formed either on or in the substrate for converting microwave energy into heat, an electrically insulating dielectric layer affixed to the conversion element, and an integrated circuit, heat sensitive element formed in sufficiently close proximity to the conversion element to be thermally coupled thereto through the dielectric layer for sensing temperature changes in the conversion element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.