Method for the formation of silicon oxide films
US5370904A · kind A · utility
42Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1993 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Oct 29, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate and converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in an inert gas atmosphere at 250.degree. C. to 500.degree. C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached .ltoreq.80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.