Diamond film deposition with a microwave plasma
US5370912A · kind A · utility
18Cited by
5References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 1993 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Jul 20, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/511
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing diamond film on a substrate utilizing a tuneable microwave cavity with an adjustable height and antenna and an electrically insulated chamber comprises the steps of decreasing the pressure within the chamber, creating a plasma including hydrogen gas within the chamber, tuning the cavity by varying its height and the depth of insertion of the antenna to minimize reflected power and properly position the plasma on the substrate, injecting a hydrocarbon gas into the chamber, and maintaining the plasma for a sufficient time for diamond film of the desired thickness to be deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.