Semiconductor member and process for preparing semiconductor member
US5371037A · kind A · utility
424Cited by
6References
48Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 5, 1991 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Aug 5, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76264
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for preparing a semiconductor member by forming a member having a non-porous monocrystalline semiconductor region on a porous monocrystalline semiconductor region, bonding the insulating surface of a member to the surface of the non-porous monocrystalline semiconductor region, and then removing the porous monocrystalline semiconductor region by etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.