Amorphous silicon rectifying contact on diamond and method for making same
US5371382A · kind A · utility
13Cited by
6References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1992 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Apr 27, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A rectifying contact for use at high temperatures includes a semiconducting diamond layer and a doped amorphous silicon layer thereon. The amorphous silicon layer may be doped with either a p-type or n-type dopant. The semiconducting diamond may be a doped polycrystalline diamond layer or a natural IIb single crystal diamond. The amorphous silicon layer may be formed by sputter deposition from doped silicon targets. A subsequent heating of the thus formed rectifying contact lowers the forward resistance of the contact by activating additional dopant atoms within the amorphous silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.