Wide bandgap semiconductor light emitters
US5371409A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1993 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Nov 16, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/322
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Type-II semiconductor heterojunction light emitting devices formed on a substrate are described wherein a graded injection layer is used to accelerate electrons over the electron barrier formed by the junction. Further, wide band gap semiconductor LEDs and lasers are proposed formed of II-VI materials which emit light in the blue and green wavelengths. Particularly, a system composed of n-CdSe:Al/Mg.sub.x Cd.sub.1-x Se/Mg.sub.y Zn.sub.1-y Te/p-ZnTe are described where the value of y determines the wavelength of the emitted light in the green or blue region and x varies across the graded injection layer for raising the energy levels of excited electrons.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.