Patent · US Expired

Drive circuit for a power MOSFET with load at the source side

US5371418A · kind A · utility

11Cited by

10References

6Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Ludwig Leipold · Munich, DE
Rainald Sander · Oberhaching, DE
Jenoe Tihanyi · Tauberbischofsheim, DE

Key dates

Filing date	Jul 23, 1993
Grant date	Dec 6, 1994
Priority date	—
Expiry date	Jul 23, 2013

Classification

Technology area (CPC H)Electricity
CPC primaryH03K2217/0036
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

Power FETs having a load at the source side require a gate voltage lying above the drain voltage in order to be driven completely conductive. This can occur with a known pump circuit. In the drive circuit disclosed, the diode connected to the gate terminal of the power FET is a depletion FET whose substrate terminal is applied to the oscillating voltage that is required for the operation of the pump circuit. The cut off voltage is thus synchronously set relative to the oscillating voltage such that low losses arise when loading C.sub.GS and an adequately high inhibit voltage can be built up when loading the pump capacitor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.