Magnetostatic wave device containing acoustic wave absorbing layer
US5371482A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1992 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Sep 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2/001
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A circuit element utilizing magnetostatic is formed with an acoustic wave absorbing layer on the other major surface of a non-magnetic substrate remote from the major surface where a magnetostatic wave propagation medium is formed, for the purpose of effectively suppressing an unnecessary spurious mode over a wide frequency band so as to obviate undesirable degradation of the resonance characteristic. That is, the circuit element utilizing the magnetostatic wave includes a thin film of YIG formed on one of the major surfaces of the non-magnetic substrate of GGG by the method of liquid phase epitaxial growth, and electrodes formed on the YIG thin film. In the circuit element, an acoustic wave absorbing layer is formed on the other major surface of the GGG substrate remote from the major surface where the YIG thin film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.