Magnetoresistive head structure that prevents under film from undesirable etching
US5371643A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 1992 |
| Grant date | Dec 6, 1994 |
| Priority date | — |
| Expiry date | Aug 11, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive head is fabricated with a high yield rate by preventing the electrode film from breaking down. An upper shield film is formed with an electrode separation layer and an upper gap film disposed between it and the electrode film. The electrode film is prevented from being etched when the upper shield film is subjected to ion milling as a result. Further, the upper gap film is laid on top of the electrode separation layer, and a lead is satisfactorily protected and prevented from being exposed. Thus, the upper shield film and the lead are prevented from becoming short-circuited as a result of the disconnection of the electrode film and the exposure of the lead.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.