Method of forming single-crystalline thin film
US5372089A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jul 26, 1993 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Jul 26, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/732
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed herein is a method of forming a single-crystalline thin film having excellent crystallinity on a base material without depending on the material for and crystallinity of the base material. In this method, a base material is provided thereon with a mask which can prevent chemical species contained in a vapor phase from adhering to the base material. The base material is continuously moved along arrow A, to deliver a portion covered with the mask into the vapor phase for crystal growth. Thus, a thin film is successively deposited on the portion of the base material, which is delivered from under the mask, from the vapor phase. A crystal growth end is formed on a boundary region between a portion of the base material which is covered with the mask and that which is exposed to the vapor phase, so that a crystal having the same orientation as the growth end is grown on a portion of the base material newly exposed by the movement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.