Method for producing fine structure for electronic device
US5372675A · kind A · utility
21Cited by
4References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1993 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Aug 20, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for producing a fine semiconductor structure, a first layer is formed on a second layer, an etching-resistant mask is formed on the first layer, the second layer is etched in an etchant to form a desired shape thereof, a composition of the first layer is different from a composition of the second layer, and at least one of boundary surfaces of the etching-resistant mask and the first layer facing to each other is substantially prevented from including another substance which is different from both of the etching-resistant mask and the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.