Method of manufacturing semiconductor devices
US5372677A · kind A · utility
4Cited by
0References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1992 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Dec 16, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After a silicon nitride film (2) is etched by using a first resist pattern (3A) as a mask before coating a second resist (4) superposing on the first resist pattern (3A), a surface layer portion of the first resist pattern (3A) is subjected to a plasma treatment by using oxygen (O.sub.2). A properties changed layer in the surface layer portion of the first resist pattern (3A) is removed or modified to improve the adhesion between the second resist (4) and the first resist pattern (3A), and the stripping of the second resist (4) is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.