Low temperature method for synthesizing micrograin tungsten carbide
US5372797A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1993 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Apr 21, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/80
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for forming monotungsten carbide, comprising heating a solid, non-elemental tungsten-containing material in a flowing atmosphere containing molecular hydrogen and molecular methane for a time sufficient to convert substantially all of the tungsten-containing material to monotungsten carbide, The heating brings the temperature of the tungsten-containing material to a first elevated temperature of from about 520 to about 550.degree. C. and, subsequently, at a rate of from about 3 to about 10.degree. C. per minute, the heating brings the temperature from the first elevated temperature to a second elevated temperature of about 800 to about 900.degree. C. Thereafter the temperature is held at the second elevated temperature for at least about 15 minutes. At least about 50 weight percent of the monotungsten carbide formed is formed while holding the temperature at the second elevated temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.