Method for the formation of a silicon oxide film
US5372842A · kind A · utility
26Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1993 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Oct 29, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2111/00844
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a method for the formation of a thick silicon oxide film which is insoluble in organic solvents and free of cracks and pinholes on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate, converting the hydrogen silsesquioxane resin into preceramic silicon oxide by heating in an inert gas atmosphere, and converting the preceramic silicon oxide into silicon oxide ceramic by heating in an atmosphere selected from the group consisting of oxygen and oxygen mixed with an inert gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.