Silicon device production
US5372860A · kind A · utility
60Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1993 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Jul 6, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a glass panel for silicon device fabrication, which method comprises forming a noncrystalline, or mixed-phase, silicon film on a glass substrate, the glass having a strain point greater than 560.degree. C., and subjecting the filmed glass to a heat treatment comprising heating at a temperature of at least 550.degree. C. for a period of time sufficient to convert the silicon film to polycrystalline silicon and to compact the glass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.