Modulated strain heterostructure light emitting device
US5373166A · kind A · utility
46Cited by
1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1993 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Sep 24, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3406
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A heterostructure laser diode is provided with an active region that includes a ternary or quaternary semiconductor compound. The composition of the semiconductor compound forming the active region is modulated resulting in an active region with a modulated strain profile (.increment.a/a), e.g., a triangular sawtooth-like strain profile, perpendicular to the laser diodes epitaxial layers, i.e., parallel to the z-axis. This permits the present invention to increase strain and avoid formation of misfit dislocations by compensation, i.e., by inserting strained layers having opposing strains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.