Bipolar transistor with monoatomic base layer between emitter and collector layers

US5373186A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Erdmann F. Schubert · Hazlet, US
• Klaus Ploog · Stuttgart, DE
• Albrecht Fischer · Löchgau, DE

Key dates

• Filing date: Apr 29, 1994
• Grant date: Dec 13, 1994
• Expiry date: Apr 29, 2014

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A preferred device is a bipolar transistor in which case the Dirac-delta doped p-type layer 38 is directly between n-type collector and emitter layers (32, 33). The bipolar transistor described herein has an extremely low base width and is capable of operating at high frequencies.