Non-volatile storage cell of the metal - ferroelectric - semiconductor type
US5373462A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 1993 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Feb 16, 2013 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/223
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A process for producing an improved non-volatile storage cell of the metal-ferroelectric-semiconductor type is provided. The non-volatile storage cell has at least one metal-ferroelectric-semiconductor transistor formed in a semiconductor substrate and having a source (5), a drain (6), and a gate (4). The gate is insulated from the source and the drain by a ferroelectric layer (2). The transistor has at least one lateral programming electrode (BL) in contact with the ferroelectric layer and insulated from the gate. In a preferred embodiment the cell also has a dielectric layer (7) interposed between the ferroelectric layer and the substrate. Particular utility for the present invention is found in the area of static memory devices, although other utilities are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.