Surface emitting laser and method of manufacturing the same
US5373520A · kind A · utility
42Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 1993 |
| Grant date | Dec 13, 1994 |
| Priority date | — |
| Expiry date | Aug 11, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34313
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A current constriction layer surrounding a vertical-cavity region is formed in a cladding layer of a surface emitting laser. The forbidden band width of the material forming this current constriction layer is wider than the forbidden band width of a material forming the cladding layer. Further, the current constriction layer and the cladding layer are formed of semiconductors, and conduction types thereof are different from each other. Further, the upper surface of the cladding layer covering the current constriction layer has a step in the periphery of vertical-cavity region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.