Highly polishable, highly thermally conductive silicon carbide
US5374412A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1992 |
| Grant date | Dec 20, 1994 |
| Priority date | — |
| Expiry date | Oct 13, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4404
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to <5 .ANG. RMS as measured on a Talystep mechanical profiler and has a thermal conductivity of at least about 300 W/mk. The silicon carbide is particularly suitable for applications where high polishability and thermal conductivity is desired, such as hard disc drives and read/write heads of head-disc assemblies, and also optical apparatus which require a very high polish.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.