Method for preparing semiconductor member
US5374581A · kind A · utility
305Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1993 |
| Grant date | Dec 20, 1994 |
| Priority date | — |
| Expiry date | Sep 27, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/012
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing a semiconductor member comprising steps of: making a silicon substrate porous; forming a non-porous silicon monocrystalline layer on the porous silicon substrate at a first temperature; bonding a surface of the non-porous silicon monocrystalline layer on to another substrate having an insulating material on the surface thereof; etching the porous silicon by removing the porous silicon of the bonded substrate by chemical etching; and forming a monocrystalline silicon layer on the non-porous silicon monocrystalline layer by epitaxial growth at a second temperature higher than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.