Method of making a metal plug
US5374591A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1992 |
| Grant date | Dec 20, 1994 |
| Priority date | — |
| Expiry date | Mar 23, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal plug is formed in a connection hole such as a via hole or a contact hole to provide an interconnection between multilayer wires in a semiconductor integrated circuit. First, an adhesion layer is deposited on an insulating film, and an area of the adhesion layer is etched away isotropic etching through an opening in a resist mask, the area being larger than the opening in the resist mask. Thereafter, the insulating film is etched through the opening in the resist mask by anisotropic etching, forming a connection hole in the insulating film. Then, a metal layer such as a blanket tungsten layer is deposited on the adhesion layer and in the connection hole. The metal layer is etched back and the adhesion layer is etched away, leaving the metal layer as a metal plug in the connection hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.