HgCdTe S-I-S two color infrared detector
US5374841A · kind A · utility
35Cited by
9References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 11, 1994 |
| Grant date | Dec 20, 1994 |
| Priority date | — |
| Expiry date | Jan 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2823
Abstract
A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are HgCdTe with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with respect to one semiconductor. The structure can be grown by current MBE techniques and does not require any significant additional steps with regard to fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.