Method for formation of a trench accessible cold-cathode field emission device
US5374868A · kind A · utility
91Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1992 |
| Grant date | Dec 20, 1994 |
| Priority date | — |
| Expiry date | Sep 11, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2329/8625
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field emitter structure is formed, having trench accessible cold cathode tips is fabricated by forming trenches in a substrate. The trenches are subsequently filled with a conformal insulating layer, a highly conductive layer, and a polysilicon layer. The layers are etched to form emitter tips which are disposed contiguous with the trenches. Electrical signals are propagated through the trenches permitting increased performance of the emitter structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.