Boride materials for electronic elements and method of preparing the same
US5376309A · kind A · utility
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Key dates
| Filing date | Sep 3, 1993 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Sep 3, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a boride material for electronic elements, which is represented by a chemical formula of A.sub.1-x E.sub.x B.sub.12 (where A is Zr of Hf, E is Sc or Y, and 0.1.ltoreq.x.ltoreq.0.9) and the crystal system of which is a cubic one at a temperature not lower than its phase transition temperature and is a hexagonal one at a temperature not higher than its phase transition temperature. The boride material is prepared by mixing oxide powders or sulfate powders of the constitutive elements A and E and a boron powder followed by shaping the powder mixture and then sintering the shaped body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.