Method of fabricating a semiconductor image pickup device
US5376558A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 1993 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Apr 2, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/1843
Abstract
A method for fabricating a semiconductor image pickup device for detecting a light image includes a step of forming an array of detector elements, each of which generates an electronic signal in response to light incident thereto, and a step of forming a light absorbing layer which is situated to optically isolate each of the detector elements. The array of detector elements in the light absorbing layer can be formed on a substrate. In one embodiment, the light absorbing layer is produced by forming a first layer contacting with each of the detector elements which has a first refractive index, forming a second layer contacting with the first layer which has a second refractive index greater than the first refractive index of the first layer, and forming a metal layer contacting with the second layer. By forming the light absorbing layer in this manner, the array of detecting elements can be optically isolated from each other so that problems such as cross-talk, for example, can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.