Fabrication of semiconductor laser elements
US5376581A · kind A · utility
3Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1993 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Sep 10, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a process for fabricating a semiconductor laser by forming a double-heterostructure made up of a first cladding layer, an active layer and a second cladding layer on a semiconductor substrate at the first growth step, forming protecting films for selective growth on both sides of a striped region for current injection, without etching the second cladding layer, and growing a third cladding layer and a contact layer for current injection at a second growth step, the second cladding layer formed at the first growth step is grown to the thickness required for achieving laser characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.