Method for manufacturing semiconductor device
US5376591A · kind A · utility
40Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1992 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Jun 8, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A, method for forming semiconductor device, includes forming an insulating film on a body by chemical vapor deposition, at low temperature raising the temperature of, the body, and exposing the body to plasma gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.