Method of making thin film superconductor assembly
US5376625A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 20, 1992 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Feb 20, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/821
Abstract
A thin film superconductor assembly is disclosed along with a method of fabricating same. The assembly comprises a self-supporting substrate defining at least a portion of a containment for a flow of cryogenic fluid, a dielectric layer adherent to a surface of the substrate, a thin film superconductor adherent to the dielectric layer and a moisture and oxygen impervious electrically insulating coating covering the thin film superconductor. A method of forming such thin film superconductor assembly, wherein the dielectric layer consists essentially of aluminum nitride, comprises growing the aluminum nitride dielectric layer integrally on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.