Method of preparing Tl-containing oxide superconducting thin film
US5376627A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 1993 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Mar 5, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/742
Abstract
Provided herein is a method of efficiently preparing a thin film having a higher critical temperature as to an oxide superconducting material containing Tl. A thin film of an oxide containing Tl is formed and then heat treated at a temperature of about 850.degree. to 950.degree. C. for a short time, and thereafter further heat treated at a temperature, which is lower than the preceding heat treatment temperature, of at least about 750.degree. C. for a long time. The thin film is heat treated in an atmosphere having an oxygen partial pressure of not more than about 0.1 atm. In formation of a Tl superconducting thin film, on the other hand, a 1212 phase layer is reacted with an amorphous Ca--Cu--O layer to form a 1223 phase layer, or a layer containing volatile metal elements (Tl, Bi and Pb, for example) and oxygen is reacted with another layer containing other elements than the volatile metal elements to form a superconducting film having a high critical temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.