Semiconductor device
US5376812A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 20, 1989 |
| Grant date | Dec 27, 1994 |
| Priority date | — |
| Expiry date | Dec 20, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/161
Abstract
A method for producing a Schottky barrier gate type field effect transistor includes producing a low concentration active region at a desired position of a semi-insulating compound semiconductor substrate and producing a gate electrode comprising refractory metal on the active region, producing a first insulating film and etching the same thereby to produce first side wall assist films comprising the first insulating film at both side walls of the gate electrode, removing one of the first side wall assist films at the side where a source electrode is to be produced, depositing a second insulating film to the thickness less than that of the first insulating film, etching the second insulating film thereby to produce a second side wall assist film having narrower width than that of the first side wall assist film at the side wall of the gate electrode where the source electrode is to be produced, and conducting ion implantation using the first and second side wall assist films and the gate electrode as a mask thereby to produce high concentration active regions in asymmetrical configurations at sides of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.